Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 105,00
€ 4,20 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 122,85
€ 4,914 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
25
€ 105,00
€ 4,20 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 122,85
€ 4,914 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
25
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Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
25 - 45 | € 4,20 | € 21,00 |
50 - 120 | € 4,10 | € 20,50 |
125 - 245 | € 4,00 | € 20,00 |
250+ | € 3,35 | € 16,75 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu