Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
KM 205,36
KM 8,214 Each (Supplied on a Reel) (bez PDV-a)
KM 240,27
KM 9,61 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
KM 205,36
KM 8,214 Each (Supplied on a Reel) (bez PDV-a)
KM 240,27
KM 9,61 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
25 - 45 | KM 8,214 | KM 41,07 |
50 - 120 | KM 8,019 | KM 40,09 |
125 - 245 | KM 7,823 | KM 39,12 |
250+ | KM 6,552 | KM 32,76 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu