Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
90 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 3.743
RSD 748,538 komadno (u pakovanju od 5) (bez PDV-a)
RSD 4.491
RSD 898,246 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 3.743
RSD 748,538 komadno (u pakovanju od 5) (bez PDV-a)
RSD 4.491
RSD 898,246 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 748,538 | RSD 3.743 |
25 - 45 | RSD 653,174 | RSD 3.266 |
50 - 120 | RSD 585,244 | RSD 2.926 |
125 - 245 | RSD 576,10 | RSD 2.880 |
250+ | RSD 513,395 | RSD 2.567 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
90 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu