Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 107,50
€ 10,75 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 125,78
€ 12,58 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
10
€ 107,50
€ 10,75 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 125,78
€ 12,58 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
10
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena |
---|---|
10 - 24 | € 10,75 |
25 - 49 | € 10,25 |
50 - 99 | € 9,60 |
100+ | € 9,25 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.