Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220FP
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
KM 12,05
KM 6,024 Each (In a Pack of 2) (bez PDV-a)
KM 14,10
KM 7,048 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 12,05
KM 6,024 Each (In a Pack of 2) (bez PDV-a)
KM 14,10
KM 7,048 Each (In a Pack of 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 6,024 | KM 12,05 |
10 - 18 | KM 5,809 | KM 11,62 |
20 - 48 | KM 5,437 | KM 10,87 |
50+ | KM 5,418 | KM 10,84 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220FP
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.