Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 52,00
€ 0,52 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 60,84
€ 0,608 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
100
€ 52,00
€ 0,52 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 60,84
€ 0,608 komadno (isporučuje se u namotaju) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
100 - 490 | € 0,52 | € 5,20 |
500 - 990 | € 0,50 | € 5,00 |
1000 - 2490 | € 0,48 | € 4,80 |
2500+ | € 0,47 | € 4,70 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Detalji o proizvodu