Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 493,80
komadno (u pakovanju od 5) (bez PDV-a)
RSD 592,56
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 493,80
komadno (u pakovanju od 5) (bez PDV-a)
RSD 592,56
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 493,80 | RSD 2.469 |
25 - 45 | RSD 475,511 | RSD 2.378 |
50 - 120 | RSD 445,465 | RSD 2.227 |
125 - 245 | RSD 418,032 | RSD 2.090 |
250+ | RSD 412,806 | RSD 2.064 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si