Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,617
komadno (u pakovanju od 20) (bez PDV-a)
KM 3,062
komadno (u pakovanju od 20) (s PDV-om)
Standard
20
KM 2,617
komadno (u pakovanju od 20) (bez PDV-a)
KM 3,062
komadno (u pakovanju od 20) (s PDV-om)
Standard
20
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 80 | KM 2,617 | KM 52,34 |
100 - 180 | KM 2,076 | KM 41,53 |
200 - 480 | KM 2,033 | KM 40,66 |
500 - 980 | KM 1,968 | KM 39,36 |
1000+ | KM 1,882 | KM 37,63 |
Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Zemlja podrijetla
China