Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,70
komadno (u namotaju od 2000) (bez PDV-a)
€ 0,819
komadno (u namotaju od 2000) (s PDV-om)
2000
€ 0,70
komadno (u namotaju od 2000) (bez PDV-a)
€ 0,819
komadno (u namotaju od 2000) (s PDV-om)
2000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China