P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

RS kataloški broj:: 753-3166brend: InfineonProizvođački broj:: SPB80P06P G
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Minimum Operating Temperature

-55 °C

Height

4.57mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 708

RSD 708 Each (bez PDV-a)

RSD 850

RSD 850 Each (s PDV-om)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 708
2RSD 1.416
3RSD 2.124
4RSD 2.832
5RSD 3.540
6RSD 4.248
7RSD 4.956
8RSD 5.664
9RSD 6.372
10RSD 6.597
11RSD 7.257
12RSD 7.916
13RSD 8.576
14RSD 9.236
15RSD 9.896

RSD 708

RSD 708 Each (bez PDV-a)

RSD 850

RSD 850 Each (s PDV-om)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 708
2RSD 1.416
3RSD 2.124
4RSD 2.832
5RSD 3.540
6RSD 4.248
7RSD 4.956
8RSD 5.664
9RSD 6.372
10RSD 6.597
11RSD 7.257
12RSD 7.916
13RSD 8.576
14RSD 9.236
15RSD 9.896

Kupujte na veliko

količinaJedinična cena
1 - 9RSD 708
10 - 24RSD 660
25 - 49RSD 643
50 - 99RSD 623
100+RSD 598

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Minimum Operating Temperature

-55 °C

Height

4.57mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više