Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 62,705
komad (isporučivo u Reel) (bez PDV-a)
RSD 75,246
komad (isporučivo u Reel) (s PDV-om)
100
RSD 62,705
komad (isporučivo u Reel) (bez PDV-a)
RSD 75,246
komad (isporučivo u Reel) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
100 - 225 | RSD 62,705 | RSD 1.568 |
250 - 475 | RSD 57,479 | RSD 1.437 |
500 - 975 | RSD 52,254 | RSD 1.306 |
1000+ | RSD 49,641 | RSD 1.241 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.