Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.94mm
Detalji o proizvodu
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 43,11
komad (isporučivo u Reel) (bez PDV-a)
RSD 51,732
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
RSD 43,11
komad (isporučivo u Reel) (bez PDV-a)
RSD 51,732
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
10 - 90 | RSD 43,11 | RSD 431 |
100 - 240 | RSD 37,884 | RSD 379 |
250 - 490 | RSD 33,965 | RSD 340 |
500 - 990 | RSD 31,352 | RSD 314 |
1000+ | RSD 28,74 | RSD 287 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.94mm
Detalji o proizvodu