onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 842,595
komad (u Tubi od 30) (bez PDV-a)
RSD 1.011,114
komad (u Tubi od 30) (s PDV-om)
30
RSD 842,595
komad (u Tubi od 30) (bez PDV-a)
RSD 1.011,114
komad (u Tubi od 30) (s PDV-om)
30
Kupujte na veliko
| količina | Jedinična cena | Po cev |
|---|---|---|
| 30 - 90 | RSD 842,595 | RSD 25.278 |
| 120 - 240 | RSD 679,301 | RSD 20.379 |
| 270+ | RSD 672,77 | RSD 20.183 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda