Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 56,173
komadno (u pakovanju od 25) (bez PDV-a)
RSD 67,408
komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 56,173
komadno (u pakovanju od 25) (bez PDV-a)
RSD 67,408
komadno (u pakovanju od 25) (s PDV-om)
Standard
25
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 75 | RSD 56,173 | RSD 1.404 |
100 - 225 | RSD 48,335 | RSD 1.208 |
250 - 475 | RSD 44,416 | RSD 1.110 |
500 - 975 | RSD 40,497 | RSD 1.012 |
1000+ | RSD 37,884 | RSD 947 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Detalji o proizvodu