Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,812
Each (Supplied on a Reel) (bez PDV-a)
KM 3,29
Each (Supplied on a Reel) (s PDV-om)
10
KM 2,812
Each (Supplied on a Reel) (bez PDV-a)
KM 3,29
Each (Supplied on a Reel) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
10 - 40 | KM 2,812 | KM 28,12 |
50 - 90 | KM 2,704 | KM 27,04 |
100 - 240 | KM 2,531 | KM 25,31 |
250 - 490 | KM 2,379 | KM 23,79 |
500+ | KM 2,358 | KM 23,58 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.