Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 431
RSD 43,11 komad (isporučivo u Reel) (bez PDV-a)
RSD 517
RSD 51,732 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
RSD 431
RSD 43,11 komad (isporučivo u Reel) (bez PDV-a)
RSD 517
RSD 51,732 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu