Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
9 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
P.O.A.
Standard
5
P.O.A.
Standard
5
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
9 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Detalji o proizvodu