Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
KM 86,54
KM 3,462 Each (Supplied on a Reel) (bez PDV-a)
KM 101,25
KM 4,051 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
KM 86,54
KM 3,462 Each (Supplied on a Reel) (bez PDV-a)
KM 101,25
KM 4,051 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
25 - 95 | KM 3,462 | KM 17,31 |
100 - 245 | KM 3,149 | KM 15,74 |
250 - 495 | KM 3,071 | KM 15,35 |
500+ | KM 3,012 | KM 15,06 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu