Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Detalji o proizvodu
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 168,519
komadno (u pakovanju od 5) (bez PDV-a)
RSD 202,223
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 168,519
komadno (u pakovanju od 5) (bez PDV-a)
RSD 202,223
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 168,519 | RSD 843 |
50 - 120 | RSD 155,456 | RSD 777 |
125 - 245 | RSD 154,149 | RSD 771 |
250 - 495 | RSD 146,311 | RSD 732 |
500+ | RSD 138,473 | RSD 692 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Detalji o proizvodu