Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 1.234
komad (isporucivo u Tubi) (bez PDV-a)
RSD 1.481
komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
1
RSD 1.234
komad (isporucivo u Tubi) (bez PDV-a)
RSD 1.481
komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
1
Kupujte na veliko
količina | Jedinična cena |
---|---|
1 - 9 | RSD 1.234 |
10 - 24 | RSD 1.176 |
25 - 49 | RSD 1.104 |
50 - 99 | RSD 1.084 |
100+ | RSD 1.058 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Zemlja podrijetla
China
Detalji o proizvodu