Tehnička dokumentacija
Tehnički podaci
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowZemlja podrijetla
United Kingdom
Detalji o proizvodu
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 11,25
Each (In a Pack of 5) (bez PDV-a)
€ 13,162
Each (In a Pack of 5) (s PDV-om)
5
€ 11,25
Each (In a Pack of 5) (bez PDV-a)
€ 13,162
Each (In a Pack of 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 120 | € 11,25 | € 56,25 |
125 - 370 | € 10,25 | € 51,25 |
375 - 995 | € 9,40 | € 47,00 |
1000 - 1995 | € 8,60 | € 43,00 |
2000+ | € 8,30 | € 41,50 |
Tehnička dokumentacija
Tehnički podaci
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowZemlja podrijetla
United Kingdom
Detalji o proizvodu
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.