Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSIATMA1

RS kataloški broj:: 906-4362robna marka: InfineonProizvođački broj:: BSC011N03LSIATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.56V

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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KM 25,43

KM 2,543 Each (In a Pack of 10) (bez PDV-a)

KM 29,75

KM 2,975 Each (In a Pack of 10) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSIATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 25,43
20KM 50,85
30KM 76,28
40KM 101,70
50KM 127,13
60KM 152,55
70KM 177,98
80KM 203,40
90KM 228,83
100KM 254,25
110KM 279,68
120KM 305,10
130KM 330,53
140KM 355,96
150KM 381,38

KM 25,43

KM 2,543 Each (In a Pack of 10) (bez PDV-a)

KM 29,75

KM 2,975 Each (In a Pack of 10) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSIATMA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 25,43
20KM 50,85
30KM 76,28
40KM 101,70
50KM 127,13
60KM 152,55
70KM 177,98
80KM 203,40
90KM 228,83
100KM 254,25
110KM 279,68
120KM 305,10
130KM 330,53
140KM 355,96
150KM 381,38

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.56V

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više