Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
RSD 379
RSD 37,884 komadno (u pakovanju od 10) (bez PDV-a)
RSD 455
RSD 45,461 komadno (u pakovanju od 10) (s PDV-om)
10
RSD 379
RSD 37,884 komadno (u pakovanju od 10) (bez PDV-a)
RSD 455
RSD 45,461 komadno (u pakovanju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 90 | RSD 37,884 | RSD 379 |
100+ | RSD 18,289 | RSD 183 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.