Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 20,902
komad (isporučivo u Reel) (bez PDV-a)
RSD 25,082
komad (isporučivo u Reel) (s PDV-om)
200
RSD 20,902
komad (isporučivo u Reel) (bez PDV-a)
RSD 25,082
komad (isporučivo u Reel) (s PDV-om)
200
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
200 - 800 | RSD 20,902 | RSD 4.180 |
1000 - 1800 | RSD 13,063 | RSD 2.613 |
2000 - 4800 | RSD 11,757 | RSD 2.351 |
5000+ | RSD 10,451 | RSD 2.090 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.