Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 49,641
komad (isporučivo u Reel) (bez PDV-a)
RSD 59,569
komad (isporučivo u Reel) (s PDV-om)
100
RSD 49,641
komad (isporučivo u Reel) (bez PDV-a)
RSD 59,569
komad (isporučivo u Reel) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
100 - 400 | RSD 49,641 | RSD 4.964 |
500+ | RSD 31,352 | RSD 3.135 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu