Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 145,005
komadno (u pakovanju od 20) (bez PDV-a)
RSD 174,006
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 145,005
komadno (u pakovanju od 20) (bez PDV-a)
RSD 174,006
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
20 - 80 | RSD 145,005 | RSD 2.900 |
100+ | RSD 129,329 | RSD 2.587 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Detalji o proizvodu