Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 30,046
komadno (u pakovanju od 100) (bez PDV-a)
RSD 36,055
komadno (u pakovanju od 100) (s PDV-om)
100
RSD 30,046
komadno (u pakovanju od 100) (bez PDV-a)
RSD 36,055
komadno (u pakovanju od 100) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
100 - 400 | RSD 30,046 | RSD 3.005 |
500 - 900 | RSD 26,127 | RSD 2.613 |
1000 - 1900 | RSD 23,514 | RSD 2.351 |
2000 - 2900 | RSD 22,208 | RSD 2.221 |
3000+ | RSD 20,902 | RSD 2.090 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu