Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Series
DMN2056U
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 61,398
komadno (u pakovanju od 50) (bez PDV-a)
RSD 73,678
komadno (u pakovanju od 50) (s PDV-om)
50
RSD 61,398
komadno (u pakovanju od 50) (bez PDV-a)
RSD 73,678
komadno (u pakovanju od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
50 - 450 | RSD 61,398 | RSD 3.070 |
500 - 950 | RSD 27,433 | RSD 1.372 |
1000+ | RSD 22,208 | RSD 1.110 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Series
DMN2056U
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu