Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
KM 226,87
KM 0,567 Each (Supplied on a Reel) (bez PDV-a)
KM 265,44
KM 0,663 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
400
KM 226,87
KM 0,567 Each (Supplied on a Reel) (bez PDV-a)
KM 265,44
KM 0,663 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
400
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
400 - 975 | KM 0,567 | KM 14,18 |
1000+ | KM 0,45 | KM 11,25 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu