Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Width
3.35mm
Minimum Operating Temperature
-55 °C
Height
0.85mm
Detalji o proizvodu
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 112,346
komadno (u pakovanju od 25) (bez PDV-a)
RSD 134,815
komadno (u pakovanju od 25) (s PDV-om)
25
RSD 112,346
komadno (u pakovanju od 25) (bez PDV-a)
RSD 134,815
komadno (u pakovanju od 25) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 375 | RSD 112,346 | RSD 2.809 |
400 - 975 | RSD 65,317 | RSD 1.633 |
1000+ | RSD 52,254 | RSD 1.306 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Width
3.35mm
Minimum Operating Temperature
-55 °C
Height
0.85mm
Detalji o proizvodu