Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Zemlja podrijetla
China
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RSD 99,283
komad (isporučivo u Reel) (bez PDV-a)
RSD 119,14
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
RSD 99,283
komad (isporučivo u Reel) (bez PDV-a)
RSD 119,14
komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Zemlja podrijetla
China