Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
3.95mm
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
4.95mm
Typical Gate Charge @ Vgs
30.6 @ 10 V nC
Height
1.05mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 214,241
komadno (u pakovanju od 10) (bez PDV-a)
RSD 257,089
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 214,241
komadno (u pakovanju od 10) (bez PDV-a)
RSD 257,089
komadno (u pakovanju od 10) (s PDV-om)
10
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
60 V
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Width
3.95mm
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
4.95mm
Typical Gate Charge @ Vgs
30.6 @ 10 V nC
Height
1.05mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu