Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
20A
Peak Reverse Repetitive Voltage
65V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3 + Tab
Maximum Forward Voltage Drop
630mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
140A
Detalji o proizvodu
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 147,617
komadno (u pakovanju od 10) (bez PDV-a)
RSD 177,14
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 147,617
komadno (u pakovanju od 10) (bez PDV-a)
RSD 177,14
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 40 | RSD 147,617 | RSD 1.476 |
50 - 240 | RSD 118,878 | RSD 1.189 |
250 - 490 | RSD 96,67 | RSD 967 |
500 - 990 | RSD 90,138 | RSD 901 |
1000+ | RSD 83,606 | RSD 836 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
20A
Peak Reverse Repetitive Voltage
65V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3 + Tab
Maximum Forward Voltage Drop
630mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
140A
Detalji o proizvodu
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.