Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
30A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
2x Common Cathode Pair
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3 + Tab
Maximum Forward Voltage Drop
730mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
200A
Detalji o proizvodu
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 158,068
komadno (u pakovanju od 10) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 158,068
komadno (u pakovanju od 10) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 40 | RSD 158,068 | RSD 1.581 |
50 - 90 | RSD 125,41 | RSD 1.254 |
100 - 490 | RSD 104,508 | RSD 1.045 |
500 - 990 | RSD 95,363 | RSD 954 |
1000+ | RSD 87,525 | RSD 875 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
30A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
2x Common Cathode Pair
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3 + Tab
Maximum Forward Voltage Drop
730mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
200A
Detalji o proizvodu
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.