Fuji Electric 1MBi50U4F-120L-50, M262 , N-Channel IGBT Module, 50 A max, 1200 V, Panel Mount

RS kataloški broj:: 747-1103brend: Fuji ElectricProizvođački broj:: 1MBi50U4F-120L-50
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Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Brand

Fuji Electric

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

275 W

Configuration

Single

Package Type

M262

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Single

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules 1-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji Electric 1MBi50U4F-120L-50, M262 , N-Channel IGBT Module, 50 A max, 1200 V, Panel Mount

1

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P.O.A.

Fuji Electric 1MBi50U4F-120L-50, M262 , N-Channel IGBT Module, 50 A max, 1200 V, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

1

Dostupno u više komada 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Fuji Electric

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

275 W

Configuration

Single

Package Type

M262

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Single

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules 1-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više