N-Channel MOSFET, 82 A, 25 V, 8-Pin SuperSO Infineon BSC026NE2LS5ATMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
82 A
Maximum Drain Source Voltage
25 V
Package Type
SuperSO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
29 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.49mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
1.1mm
Series
OptiMOS 5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
5000
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
82 A
Maximum Drain Source Voltage
25 V
Package Type
SuperSO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
29 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.49mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
1.1mm
Series
OptiMOS 5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda