Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Forward Diode Voltage
1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 231,224
komadno (u pakovanju od 5) (bez PDV-a)
RSD 277,469
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 231,224
komadno (u pakovanju od 5) (bez PDV-a)
RSD 277,469
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 231,224 | RSD 1.156 |
50 - 120 | RSD 211,629 | RSD 1.058 |
125 - 245 | RSD 205,097 | RSD 1.025 |
250 - 495 | RSD 198,565 | RSD 993 |
500+ | RSD 192,033 | RSD 960 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Forward Diode Voltage
1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.