P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP170PH6327XTSA1

RS kataloški broj:: 826-9250brend: InfineonProizvođački broj:: BSP170PH6327XTSA1Distrelec Article No.: 30283879
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 141,086

komadno (u pakovanju od 50) (bez PDV-a)

RSD 169,303

komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP170PH6327XTSA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 7.054
100RSD 10.581
150RSD 15.872
200RSD 21.163
250RSD 25.800
300RSD 30.960
350RSD 36.121
400RSD 41.281
450RSD 46.441
500RSD 49.641
550RSD 54.605
600RSD 59.570
650RSD 64.534
700RSD 69.498
750RSD 74.462

RSD 141,086

komadno (u pakovanju od 50) (bez PDV-a)

RSD 169,303

komadno (u pakovanju od 50) (s PDV-om)

P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 Infineon BSP170PH6327XTSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 50
50RSD 7.054
100RSD 10.581
150RSD 15.872
200RSD 21.163
250RSD 25.800
300RSD 30.960
350RSD 36.121
400RSD 41.281
450RSD 46.441
500RSD 49.641
550RSD 54.605
600RSD 59.570
650RSD 64.534
700RSD 69.498
750RSD 74.462

Kupujte na veliko

količinaJedinična cenaPo pakovanje
50 - 50RSD 141,086RSD 7.054
100 - 200RSD 105,814RSD 5.291
250 - 450RSD 103,202RSD 5.160
500 - 1200RSD 99,283RSD 4.964
1250+RSD 96,67RSD 4.833

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više