Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Proverite ponovno kasnije.
RSD 67,93
komad (u Reel od 1000) (bez PDV-a)
RSD 81,516
komad (u Reel od 1000) (s PDV-om)
1000
RSD 67,93
komad (u Reel od 1000) (bez PDV-a)
RSD 81,516
komad (u Reel od 1000) (s PDV-om)
1000
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
1000 - 1000 | RSD 67,93 | RSD 67.930 |
2000 - 2000 | RSD 66,624 | RSD 66.624 |
3000+ | RSD 64,011 | RSD 64.011 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
660 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.