Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1250 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 29mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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RSD 23.383,647
komad (u kutiji od 10) (bez PDV-a)
RSD 28.060,376
komad (u kutiji od 10) (s PDV-om)
10
RSD 23.383,647
komad (u kutiji od 10) (bez PDV-a)
RSD 28.060,376
komad (u kutiji od 10) (s PDV-om)
10
Kupujte na veliko
| količina | Jedinična cena | Po kutija |
|---|---|---|
| 10 - 10 | RSD 23.383,647 | RSD 233.836 |
| 20+ | RSD 22.469,203 | RSD 224.692 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1250 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 29mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda