Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda