Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 770,746
komadno (u pakovanju od 2) (bez PDV-a)
RSD 924,895
komadno (u pakovanju od 2) (s PDV-om)
2
RSD 770,746
komadno (u pakovanju od 2) (bez PDV-a)
RSD 924,895
komadno (u pakovanju od 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 770,746 | RSD 1.541 |
10+ | RSD 607,452 | RSD 1.215 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.