Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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RSD 1.731
Each (bez PDV-a)
RSD 2.077
Each (s PDV-om)
1
RSD 1.731
Each (bez PDV-a)
RSD 2.077
Each (s PDV-om)
1
Kupujte na veliko
| količina | Jedinična cena |
|---|---|
| 1 - 9 | RSD 1.731 |
| 10+ | RSD 1.306 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda