Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.81mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
860pF
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Proverite ponovno kasnije.
RSD 320,056
komadno (u pakovanju od 10) (bez PDV-a)
RSD 384,067
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 320,056
komadno (u pakovanju od 10) (bez PDV-a)
RSD 384,067
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 40 | RSD 320,056 | RSD 3.201 |
50 - 490 | RSD 306,992 | RSD 3.070 |
500+ | RSD 293,929 | RSD 2.939 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.81mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
860pF
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.