N-Channel MOSFET, 23 A, 550 V, 3-Pin TO-220 FP Infineon IPA50R140CPXKSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220 FP
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Width
4.85mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
9.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 973
RSD 973 Each (bez PDV-a)
RSD 1.168
RSD 1.168 Each (s PDV-om)
Standard
1
RSD 973
RSD 973 Each (bez PDV-a)
RSD 1.168
RSD 1.168 Each (s PDV-om)
Standard
1
Kupujte na veliko
| količina | Jedinična cena |
|---|---|
| 1 - 9 | RSD 973 |
| 10 - 24 | RSD 830 |
| 25 - 49 | RSD 802 |
| 50 - 99 | RSD 783 |
| 100+ | RSD 745 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220 FP
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Width
4.85mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
9.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda