Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
9.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Proverite ponovno kasnije.
RSD 385,373
komad (u Reel od 1000) (bez PDV-a)
RSD 462,448
komad (u Reel od 1000) (s PDV-om)
1000
RSD 385,373
komad (u Reel od 1000) (bez PDV-a)
RSD 462,448
komad (u Reel od 1000) (s PDV-om)
1000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS P
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
9.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.