Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 450,69
komadno (u pakovanju od 10) (bez PDV-a)
RSD 540,828
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 450,69
komadno (u pakovanju od 10) (bez PDV-a)
RSD 540,828
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 10 | RSD 450,69 | RSD 4.507 |
20 - 40 | RSD 365,778 | RSD 3.658 |
50 - 90 | RSD 359,246 | RSD 3.592 |
100 - 240 | RSD 346,182 | RSD 3.462 |
250+ | RSD 333,119 | RSD 3.331 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C