Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 202,484
komadno (u pakovanju od 10) (bez PDV-a)
RSD 242,981
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 202,484
komadno (u pakovanju od 10) (bez PDV-a)
RSD 242,981
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 90 | RSD 202,484 | RSD 2.025 |
100 - 240 | RSD 160,681 | RSD 1.607 |
250 - 490 | RSD 156,762 | RSD 1.568 |
500 - 990 | RSD 151,536 | RSD 1.515 |
1000+ | RSD 146,311 | RSD 1.463 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V