N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Detalji o proizvodu
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Proverite ponovno kasnije.
RSD 143,698
komadno (u pakovanju od 10) (bez PDV-a)
RSD 172,438
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 143,698
komadno (u pakovanju od 10) (bez PDV-a)
RSD 172,438
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 10 - 40 | RSD 143,698 | RSD 1.437 |
| 50 - 490 | RSD 138,473 | RSD 1.385 |
| 500 - 990 | RSD 104,508 | RSD 1.045 |
| 1000+ | RSD 90,138 | RSD 901 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Detalji o proizvodu
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda