N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

5.21mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

21.1mm

Zemlja podrijetla

China

Detalji o proizvodu

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1

P.O.A.

N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 Infineon IPW65R041CFDFKSA1
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

5.21mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

21.1mm

Zemlja podrijetla

China

Detalji o proizvodu

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više