N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.54mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Width
4.69mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 158,068
komadno (u pakovanju od 20) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 158,068
komadno (u pakovanju od 20) (bez PDV-a)
RSD 189,682
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 20 - 80 | RSD 158,068 | RSD 3.161 |
| 100 - 180 | RSD 125,41 | RSD 2.508 |
| 200 - 480 | RSD 122,797 | RSD 2.456 |
| 500 - 980 | RSD 118,878 | RSD 2.378 |
| 1000+ | RSD 113,652 | RSD 2.273 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
44 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.54mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Width
4.69mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda